unisonic technologies co., ltd bc337/bc338 npn silicon transistor www.unisonic.com.tw 1 of 3 copyright ? 2011 unisonic technologies co., ltd qw-r201-039.d switching and amplifier applications ? features * suitable for af-driver stages and low power output stages * complement to utc bc327/328 to-92 1 ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing bc337l-x-t92-b bc337g-x-t92-b to-92 c b e tape box bc337l-x-t92-k bc337g-x-t92-k to-92 c b e bulk bc337l-x-t92-r bc337g-x-t92-r to-92 c b e tape reel bc338l-x-t92-b bc338g-x-t92-b to-92 c b e tape box bc338l-x-t92-k bc338g-x-t92-k to-92 c b e bulk BC338L-X-T92-R bc338g-x-t92-r to-92 c b e tape reel
bc337/bc338 npn silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r201-039.d ? absolute maximum rating (ta=25c, unless otherwise specified) parameter symbol ratings unit bc337 50 v collector-emitter voltage bc338 v ces 30 v bc337 45 v collector-emitter voltage bc338 v ceo 25 v emitter-base voltage v ebo 5 v collector current (dc) i c 800 ma collector dissipation 625 mw derate above 25c p c 5 mw/c junction temperature t j 125 c operating temperature t opr -20 ~ +85 c storage temperature t stg -40 ~ +150 c note: absolute maximum ratings are those values be yond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol ratings unit junction to ambient ja 200 c/w junction to case jc 83.3 c/w ? electrical characteristics (ta=25c, unless otherwise specified) parameter symbol test conditions min typ max unit bc337 45 v collector-emitter breakdown voltage bc338 bv ceo i c =10ma, i b =0 25 v bc337 50 v collector-emitter breakdown voltage bc338 bv ces i c =0.1ma, v be =0 30 v emitter-base breakdown voltage bv ebo i e =0.1ma, i c =0 5 v bc337 v ce =45v, i b =0 2 100 na collector cut-off current bc338 i ces v ce =25v, i b =0 2 100 na h fe1 v ce =1v, i c =100ma 100 630 dc current gain h fe2 v ce =1v, i c =300ma 60 collector-emitter satu ration voltage v ce(sat) i c =500ma, i b =50ma 0.7 v base-emitter on voltage v be(on) v ce =1v, i c =300ma 1.2 v output capacitance c ob v cb =10v, i e =0, f=1mhz 12 pf current gain bandwidth product f t v ce =5v, i c =10ma, f=50mhz 100 mhz ? classification of h fe1 rank 16 25 40 h fe1 100-250 160-400 250-630
bc337/bc338 npn silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r201-039.d ? typical characteristics 1 0.2 collector current vs. base-emitter voltage collector current, i c (ma) base-emitter voltage, v be (v) 0.8 1.0 collector power dissipation vs. ambient temperature collector power dissipation, p c (mw) 25 50 75 100 150 175 3 10 100 1k 0.4 0.6 ambient temperature, t a ( ) 0 100 0125 common emitter v ce =1v 30 300 5k t a = 1 0 0 t a = 2 5 t a = - 2 5 200 300 400 500 600 700 3567 10 0 0.1 0.3 0.4 0.5 18 2 0.6 0 collector current vs. collector-emitter voltage collector-emitter voltage, v ce (v) 0.2 0.7 4 9 i b =1ma i b =2ma i b =3ma i b =4ma i b =10ma i b =5ma i b =6ma i b =9ma i b =8ma i b =7ma utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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